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ProblemCourse & topicStatus
View access optionsElectronics Exponential Diode Load LineElectronics Diode Incremental Resistance
Diode models and rectifier circuitsElectronics I · Mixed review
—Diode models and rectifier circuitsElectronics I · Mixed review
—MOSFET and BJT operation and biasElectronics I · Mixed review
—View access optionsElectronics Finite Beta Current MirrorElectronics Mirror Forward Active Bound
MOSFET and BJT operation and biasElectronics I · Mixed review
—Small-signal models and gainElectronics I · Mixed review
—View access optionsElectronics 1 Emitter Follower Rin RE PrimeElectronics 1 Emitter Follower Rout With RS
Small-signal models and gainElectronics I · Mixed review
—View access optionsElectronics 1 Mos Pair Differential SplitElectronics 1 Ideal Tail Common Mode Rejection
Small-signal models and gainElectronics I · Mixed review
—View access optionsElectronics 1 Source Follower Body Effect AVElectronics 1 Source Follower Gmb Rout Kcl
Single-stage and multistage amplifiersElectronics I · Mixed review
—Single-stage and multistage amplifiersElectronics I · Mixed review
—View access optionsElectronics 1 Class B Efficiency Partial SwingElectronics 1 Class B Dissipation Peak Versus VP
Single-stage and multistage amplifiersElectronics I · Mixed review
—Device and amplifier frequency responseElectronics I · Mixed review
—Device and amplifier frequency responseElectronics I · Mixed review
—Feedback, stability, and practical op-amp limitsElectronics I · Mixed review
—Feedback, stability, and practical op-amp limitsElectronics I · Mixed review
—View access optionsElectronics Inverting Schmitt ThresholdsElectronics Hysteresis Noise Immunity
Feedback, stability, and practical op-amp limitsElectronics I · Mixed review
—ELEC:9924001Mathematical problem title
DiodesElectronics 1 Problem Solving
Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Diode models and rectifier circuitsElectronics I · Calculation
—Showing 24 of 315 matching problems.
The 5 V / 1 kOhm Shockley load line has a unique root VD=0.555374 V and 55.9331 microV ripple
A 10 sin(theta) bridge with two 0.7 V drops conducts from 8.05 deg and has PIV 9.3 V
Source-resistor NMOS bias keeps ID=1 mA from ID=(2-ID)^2 and rejects the 4 mA ghost root
A beta=100 matched NPN mirror delivers 0.980392 mA and stays active only for RL<=4.386 kOhm
Unbypassed RS=0.5 kOhm cuts the CS gain to -20/3 and splits vg into vs=2/3 and vgs=1/3
Loaded emitter follower: RE||RL=500 ohm gives Rin=52.475k, ve/vsig=0.86994, Rout=69.551 ohm
Matched MOS pair with ideal tail: vo1/vid=-10, vo2/vid=+10, vod/vid=-20, ACM=0
Body-effect source follower splits 100uA and -50uA so Av=5/7, not 5/6
Stacked NMOS Rout=5.10M; RD=100k loads it to 98.077k, enhancement 2.94 not 102
Class-B at Vp=10, VCC=12: eta=5pi/24, PD peaks at 2VCC/pi not at full swing
Equal coupling poles at 20 Hz give |H|=5 and a lower -3 dB at 31.075 Hz
A 0.8 follower into 100 pF has fp=7.958 MHz and a 10-90 rise of tau ln 9
Finite A0=1e5 and fp=10 Hz close a noninverting loop to 10.9988 with fcl=90.92 kHz
A 0.5 V/us follower with a 5 V sine has full-power bandwidth 15.915 kHz, not 1 MHz
Rf=30k and Rg=10k put an inverting Schmitt at +/-3 V with 50 percent high time on 5 sin theta
A silicon diode D has its anode at node a and its cathode at the reference node 0.
A junction diode obeys the Shockley law with I_S=2.50\times 10^{-14}\,\mathrm{A} and n=1.80.
An ideal independent DC source V_S=12.0\,\mathrm{V} has its positive terminal at node s and its negative terminal a…
A discrete diode is characterized at T=300\,\mathrm{K} by the following measured pairs (v_D,i_D), with v_D=v_A-v_K…
Node s is driven by an ideal independent DC source V_S with its positive terminal at s and its negative terminal at…
Two silicon junction diodes share a common anode node a and a common cathode node 0.
Two DC sources feed a common load through steering diodes.
A periodic triangular source v_s(t) has period T=1.00\,\mathrm{ms}, peak values +6.00\,\mathrm{V} and -6.00\,\mathr…
An ideal independent source v_s(t)=8.00\sin(\omega t)\,\mathrm{V} with \omega=2\pi\times 60.0\,\mathrm{rad/s} is co…